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›› 2013,Vol. 28 ›› Issue (1): 14-27.doi: 10.1007/s11390-013-1309-5
所属专题: Computer Architecture and Systems
• Special Section on Selected Paper from NPC 2011 • 上一篇 下一篇
Zhi-Guang Chen (陈志广), Nong Xiao* (肖侬), Member, IEEE, Fang Liu (刘芳), Member, CCF and Yi-Mo Du (杜溢墨)
Zhi-Guang Chen (陈志广), Nong Xiao* (肖侬), Member, IEEE, Fang Liu (刘芳), Member, CCF and Yi-Mo Du (杜溢墨)
寿命有限是基于NAND闪存的SSD的一大缺陷.NAND闪存的两个特性降低了SSD的寿命,一个是非定点更新,另一个是同一物理块内的顺序写约束.SSD通常采用写缓冲延长寿命.但是,现有的写缓冲策略一般只关注以上提到的第一个特性,第二个特性被忽略.本文提出一种异构的写缓冲,同时兼顾以上两点.该异构写缓冲由两部分组成,DRAM和重排序区域.其中,DRAM主要用来取得较高的命中率,以克服第一个缺陷;冲排序区域主要用来对写请求冲排序,以克服第二个缺陷.该异构缓冲从两方面优于传统的写缓冲.首先,DRAM可以采用现有的任何好性能缓存替换策略,可以取得较高的命中率;其次,该缓冲对写请求冲排序,这是传统的写缓冲没有涉及到的.除了以上提到的优化,我们还考虑了SSD写缓冲的工作环境.使该异构写缓冲的性能得到进一步的提升.模拟实验证明,对于大多数工作负载,本文提出的异构写缓冲显然优于传统的写缓冲.
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