用异构缓冲对写请求重排序以延长SSD的寿命
Reorder Write Sequence by Hetero-Buffer to Extend SSD's Lifespan
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摘要: 寿命有限是基于NAND闪存的SSD的一大缺陷.NAND闪存的两个特性降低了SSD的寿命,一个是非定点更新,另一个是同一物理块内的顺序写约束.SSD通常采用写缓冲延长寿命.但是,现有的写缓冲策略一般只关注以上提到的第一个特性,第二个特性被忽略.本文提出一种异构的写缓冲,同时兼顾以上两点.该异构写缓冲由两部分组成,DRAM和重排序区域.其中,DRAM主要用来取得较高的命中率,以克服第一个缺陷;冲排序区域主要用来对写请求冲排序,以克服第二个缺陷.该异构缓冲从两方面优于传统的写缓冲.首先,DRAM可以采用现有的任何好性能缓存替换策略,可以取得较高的命中率;其次,该缓冲对写请求冲排序,这是传统的写缓冲没有涉及到的.除了以上提到的优化,我们还考虑了SSD写缓冲的工作环境.使该异构写缓冲的性能得到进一步的提升.模拟实验证明,对于大多数工作负载,本文提出的异构写缓冲显然优于传统的写缓冲.Abstract: The limited lifespan is the Achilles' heel of solid state drives (SSDs) based on NAND flash. NAND flash has two drawbacks that degrade SSDs' lifespan. One is the out-of-place update. Another is the sequential write constraint within a block. SSDs usually employ write buffer to extend their lifetime. However, existing write buffer schemes only pay attention to the first drawback, while neglect the second one. We propose a hetero-buffer architecture covering both aspects simultaneously. The hetero-buffer consists of two components, dynamic random access memory (DRAM) and the reorder area. DRAM endeavors to reduce write traffic as much as possible by pursuing a higher hit ratio (overcome the first drawback). The reorder area focuses on reordering write sequence (overcome the second drawback). Our hetero-buffer outperforms traditional write buffers because of two reasons. First, the DRAM can adopt existing superior cache replacement policy, thus achieves higher hit ratio. Second, the hetero-buffer reorders the write sequence, which has not been exploited by traditional write buffers. Besides the optimizations mentioned above, our hetero-buffer considers the work environment of write buffer, which is also neglected by traditional write buffers. By this way, the hetero-buffer is further improved. The performance is evaluated via trace-driven simulations. Experimental results show that, SSDs employing the hetero-buffer survive longer lifespan on most workloads.