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PCM内存系统研究综述

A Survey of Phase Change Memory Systems

  • 摘要: 随着应用规模的扩大,对内存容量需求也不断增加.由于DRAM扩展性有限、能耗高,基于DRAM的内存系统已难以满足应用的内存容量需求.相变存储器(PCM)具有扩展性好、静态能耗低、以及非易失性等特点,基于PCM的内存系统已成为学术界和工业界研究的热点.但是PCM同样面临着一些挑战,如写延迟较长、写耐久性有限、以及写能耗较大.本文综述了PCM内存系统体系结构方面的优化技术.首先介绍了PCM相关的背景.其次介绍了延迟优化技术,从而提高PCM内存系统的性能.然后介绍了耐久性优化技术,从而延长PCM的使用寿命.再之后介绍了能耗优化技术,从而降低PCM内存系统能耗.本文从多个维度,对比总结了不同技术的差别与联系.最后,对PCM内存系统的研究现状进行了总结,并讨论了未来可能的研究方向.

     

    Abstract: As the scaling of applications increases, the demand of main memory capacity increases in order to serve large working set. It is difficult for DRAM (dynamic random access memory) based memory system to satisfy the memory capacity requirement due to its limited scalability and high energy consumption. Compared to DRAM, PCM (phase change memory) has better scalability, lower energy leakage, and non-volatility. PCM memory systems have become a hot topic of academic and industrial research. However, PCM technology has the following three drawbacks: long write latency, limited write endurance, and high write energy, which raises challenges to its adoption in practice. This paper surveys architectural research work to optimize PCM memory systems. First, this paper introduces the background of PCM. Then, it surveys research efforts on PCM memory systems in performance optimization, lifetime improving, and energy saving in detail, respectively. This paper also compares and summarizes these techniques from multiple dimensions. Finally, it concludes these optimization techniques and discusses possible research directions of PCM memory systems in future.

     

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