关于储存系统建模和优化的综述
A Study on Modeling and Optimization of Memory Systems
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摘要: 每周期访问数(APC),并发平均内存访问时间(C-AMAT)和分层性能匹配(LPM)为三个同时考虑数据局部性和内存评估并发性的储存性能模型。APC模型测算内存体系结构的吞吐量,并由此反映储存系统的服务质量。C-AMAT模型递归表达储存访问延迟,并由此可以识别分级储存体系中的潜在瓶颈。LPM模型将每个储存层级的全局储存系统优化转化为局部优化,这通过应用程序的数据访问需求与潜在的储存系统设计匹配实现。在以往的研究中均已分别提出了上述的三个模型。本文在连贯的数学框架下重新检验了这三个模型。更准确地说,本文呈现了一个全新的数据访问储存中心视角。每个储存层级的储存周期可分为四个不同的类别,使用这四个不同的类别沿着储存分层结构界定内存访问延迟与并发。新视角提供了新见解,即,清楚地表达了同时考虑局部性和并发性的储存性能。因此,性能模型简单明了,可用于工程实践。同样,储存中心方法有助于创建统一的数学底层思维以分析和优化现在和未来的储存系统模型驱动性能。Abstract: Accesses Per Cycle (APC), Concurrent Average Memory Access Time (C-AMAT), and Layered Performance Matching (LPM) are three memory performance models that consider both data locality and memory assess concurrency. The APC model measures the throughput of a memory architecture and therefore reflects the quality of service (QoS) of a memory system. The C-AMAT model provides a recursive expression for the memory access delay and therefore can be used for identifying the potential bottlenecks in a memory hierarchy. The LPM method transforms a global memory system optimization into localized optimizations at each memory layer by matching the data access demands of the applications with the underlying memory system design. These three models have been proposed separately through prior efforts. This paper reexamines the three models under one coherent mathematical framework. More specifically, we present a new memory-centric view of data accesses. We divide the memory cycles at each memory layer into four distinct categories and use them to recursively define the memory access latency and concurrency along the memory hierarchy. This new perspective offers new insights with a clear formulation of the memory performance considering both locality and concurrency. Consequently, the performance model can be easily understood and applied in engineering practices. As such, the memory-centric approach helps establish a unified mathematical foundation for model-driven performance analysis and optimization of contemporary and future memory systems.