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A Survey of Non-Volatile Main Memory Technologies: State-of-the-Arts, Practices, and Future Directions

Hai-Kun Liu, Di Chen, Hai Jin, Xiao-Fei Liao, Binsheng He, Kan Hu, Yu Zhang

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非易失性内存技术综述:现状,实践和展望[J]. 计算机科学技术学报, 2021, 36(1): 4-32. DOI: 10.1007/s11390-020-0780-z
引用本文: 非易失性内存技术综述:现状,实践和展望[J]. 计算机科学技术学报, 2021, 36(1): 4-32. DOI: 10.1007/s11390-020-0780-z
Hai-Kun Liu, Di Chen, Hai Jin, Xiao-Fei Liao, Binsheng He, Kan Hu, Yu Zhang. A Survey of Non-Volatile Main Memory Technologies: State-of-the-Arts, Practices, and Future Directions[J]. Journal of Computer Science and Technology, 2021, 36(1): 4-32. DOI: 10.1007/s11390-020-0780-z
Citation: Hai-Kun Liu, Di Chen, Hai Jin, Xiao-Fei Liao, Binsheng He, Kan Hu, Yu Zhang. A Survey of Non-Volatile Main Memory Technologies: State-of-the-Arts, Practices, and Future Directions[J]. Journal of Computer Science and Technology, 2021, 36(1): 4-32. DOI: 10.1007/s11390-020-0780-z
非易失性内存技术综述:现状,实践和展望[J]. 计算机科学技术学报, 2021, 36(1): 4-32. CSTR: 32374.14.s11390-020-0780-z
引用本文: 非易失性内存技术综述:现状,实践和展望[J]. 计算机科学技术学报, 2021, 36(1): 4-32. CSTR: 32374.14.s11390-020-0780-z
Hai-Kun Liu, Di Chen, Hai Jin, Xiao-Fei Liao, Binsheng He, Kan Hu, Yu Zhang. A Survey of Non-Volatile Main Memory Technologies: State-of-the-Arts, Practices, and Future Directions[J]. Journal of Computer Science and Technology, 2021, 36(1): 4-32. CSTR: 32374.14.s11390-020-0780-z
Citation: Hai-Kun Liu, Di Chen, Hai Jin, Xiao-Fei Liao, Binsheng He, Kan Hu, Yu Zhang. A Survey of Non-Volatile Main Memory Technologies: State-of-the-Arts, Practices, and Future Directions[J]. Journal of Computer Science and Technology, 2021, 36(1): 4-32. CSTR: 32374.14.s11390-020-0780-z

非易失性内存技术综述:现状,实践和展望

A Survey of Non-Volatile Main Memory Technologies: State-of-the-Arts, Practices, and Future Directions

  • 摘要: 1、研究背景(context):
    新型非易失性内存的涌现,改变了计算机内存子系统的架构和数据管理模式。这些非易失性内存普遍可字节寻址,具有比DDR内存更高的存储密度、更低的成本、更高的能效,但比DDR具有更高的访问延迟和写功耗,已经有限的寿命。非易失性内存目前是DDR内存的有效补充,并可能从根本上改变未来内存子系统的架构。
    2、目的(Objective):新型非易失性内存的出现给体系结构、系统软件、编译器及编程模型的研究人员带来了新的机会,同时也为构建异构内存系统和编程开发环境带来了全新的挑战。因此,对异构内存系统已有的研究工作进行分类总结,可以让读者了解该领域最新的研究进展。
    3、方法(Method):本文首先介绍了新型非易失性内存的特性,然后从计算机存储架构、操作系统对异构内存的管理、和异构内存的编程模型三个侧面详细介绍了当前最新的研究工作,包括异构内存架构、数据持久化机制、性能优化和节能机制(如内存迁移技术),非易失性内存磨损均衡机制等。接着,从系统结构、系统软件和应用三个方面介绍了作者在异构内存系统设计方面的部分研究成果,从而通过最佳实践来提供一定的借鉴意义。最后,展望了基于新型非易失性内存的未来研究方向,并深入分析了这些研究方向上的挑战和机会。4、结果(Result & Findings):通过总结已有研究基础,为未来基于新型非易失性内存的异构内存系统的研究指明了方向。
    5、结论(Conclusions):本综述对新型非易失性内存在系统方面的研究工作进行详尽的介绍和分析,并简述了作者在这方面的最佳实践。进一步,展望了新型非易失性内存未来的研究问题。非易失性内存独有的一些特性,为革新未来计算机存储架构和计算模式带来了无限的可能。
    Abstract: Non-Volatile Main Memories (NVMMs) have recently emerged as a promising technology for future memory systems. Generally, NVMMs have many desirable properties such as high density, byte-addressability, non-volatility, low cost, and energy efficiency, at the expense of high write latency, high write power consumption, and limited write endurance. NVMMs have become a competitive alternative of Dynamic Random Access Memory (DRAM), and will fundamentally change the landscape of memory systems. They bring many research opportunities as well as challenges on system architectural designs, memory management in operating systems (OSes), and programming models for hybrid memory systems. In this article, we revisit the landscape of emerging NVMM technologies, and then survey the state-of-the-art studies of NVMM technologies. We classify those studies with a taxonomy according to different dimensions such as memory architectures, data persistence, performance improvement, energy saving, and wear leveling. Second, to demonstrate the best practices in building NVMM systems, we introduce our recent work of hybrid memory system designs from the dimensions of architectures, systems, and applications. At last, we present our vision of future research directions of NVMMs and shed some light on design challenges and opportunities.
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出版历程
  • 收稿日期:  2020-07-04
  • 修回日期:  2020-12-14
  • 发布日期:  2021-01-04

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